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      MMSD3070 — Small Signal Diode ? 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com MMSD3070 Rev. A1 1 January 2011 MMSD3070 Small Signal Diode Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 2.0 A A TSTG Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C Symbol Parameter Value Units PD Power Dissipation 400 mW RθJA Thermal Resistance, Junction to Ambient 312 °C/W Symbol Parameter Conditions Min. Max. Units VR Breakdown Voltage IR = 100 μA200 V VF Forward Voltage IF = 100mA 1.0 V IR Reverse Leakage VR = 175V VR = 175V, T A = 150 °C 100 100 nA μA CT Total Capacitance VR = 0, f = 1.0MHz 5.0 pF trr Reverse Recovery Time IF = I R = 30mA, IRR = 1.0mA, R L = 100 Ω 50 ns SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 33 |